Ivworks Co Ltd

10/13/2023 | Press release | Archived content

AlN HEMT on SiC Epiwafer, AlN Buffer layer for RF

AlN HEMT on SiC Epiwafer

4, 6 inch by Hybrid-MBE

AlN HEMT Epiwafer?

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· Large Bandgap AlN Buffer

· Higher Breakdown Field

· Outstanding Thermal Conductivity

· Stronger 2DEG Confinement Effect

Product Structure

We are proud to unveil an innovative product after months of research, development and testing. And we’re happy to introduce this cutting-edge RF HEMT device material. Elevate your projects to new heights with our new GaN on SiC which is AlN HEMT Epiwafer.

AlN HEMT Epiwaferdetails
Cap GaN 2㎚ or in- situ SiN 3 ㎚
AlGaN Barrier 18㎚ ~ 23㎚ / Al comp. 25% ~35%
GaN Channel 350㎚ , 250㎚, 150㎚, 50㎚
Undoped AlN Buffer 700㎚
Semi-insulating SiC 4inch or 6inch / US or Non-US

Product Specifications

· Wafer Bow : <30㎛

· Total Thickness Uniformity : <2%

· Edge Exclusion : 3㎜

· RMS Roughness : <1㎚

· 2DEG Rsh – GaN ch. 50㎚, 150㎚ : <470 Ω/sq.

· 2DEG Rsh – GaN ch. 250㎚, 350㎚ : <400 Ω/sq.

· Breakdown Voltage : >150V (1E-06 A/㎜)

What’s Properties?

 Mercury Probe Characteristics
 2DEG & Surface Properties

What are the characteristic?

4th Generation Hybrid-MBE

Our newest product, the AlN HEMT Epiwafer is grown using IVWorks’ unique multi-wafer GaN MBE System. With a single growth process, it can produce 14 wafers of 4 inches, 7 wafers of 6 inches, 4 wafers of 8 inches.

4 inch * 14 / 6 inch* 7 / 8 inch*4

Growth Monitoring using Artificial Intelligence Platform

The crystal structure information at the atomic layer level acquired in real-time is analyzed and applied using Artificial Intelligence by the RHEED monitoring technique of Hybrid-MBE to maximize yield rates.

Ivworks Co Ltd published this content on October 13, 2023, and is solely responsible for the information contained herein. Distributed via Public Technologies (PUBT), unedited and unaltered, on October 13, 2026 at 06:44 UTC. If you believe the information included in the content is inaccurate or outdated and requires editing or removal, please contact us at [email protected]