Year-End GaN Update: Advancing MST and Growing Industry Interest

As we head into the year's end, I wanted to give an update about our GaN development efforts. Earlier this year we demonstrated very promising physical improvements in the growth of GaN on Silicon wafers from our experiments with Texas State University using MST wafers showing significantly lower defect density than control wafers. Building on those results, we started working with Sandia National Labs to build electrical devices on those improved wafers and measure performance improvement. Early results show very compelling reductions in leakage or higher breakdown voltage on wafers using MST which we believe can be directly attributed to the improved GaN growth quality. Our team is now working to extend those results with other electrical measurements, and we expect more results early in the new year.

Atomera's early GaN results have drawn the attention of many industry stakeholders including commercial, government and research institutions. As a result of that interest, we recently submitted, with Sandia and other partners, a concept paper for a proposal to the DoE to provide funding for improved materials and wide bandgap manufacturing. While we don't expect a decision on the proposal until mid-2026, the continued recognition of MST's potential to address the power demands of AI infrastructure highlights a strong path of future growth ahead.