Atomera Inc.

04/07/2025 | Press release | Distributed by Public on 04/07/2025 19:31

How MST Adoption Works


Recently an Atomera investor queried generative AI chatbot Grok with the following question:

How big a performance improvement is necessary to see MST adoption?

The AI answer was actually a pretty good high-level summary of how the industry views this subject. In practice however, the decision-making process is more nuanced. I sent along an answer to the investor with some insight into that process and wanted to share with a wider audience. I hope this is helpful:

Grok's Response:

In the semiconductor industry, the threshold for performance improvement to drive adoption isn't a fixed number-it's a sliding scale shaped by cost, complexity, and market pressure. That said, historical trends and industry benchmarks give us a rough yardstick for what's "big enough" to move the needle.

Traditionally, a full process node transition (e.g., 7nm to 5nm) delivers about 15-30% performance improvement (transistor speed or power efficiency), 20-40% power reduction, or 50-60% area scaling, depending on the metric and manufacturer. These leaps justify the massive R&D and fab retooling costs-often billions of dollars-because they keep Moore's Law limping along and meet demands from high-stakes markets like mobile, AI, and automotive. For a drop-in technology like Atomera's MST, which doesn't require new equipment or a node shrink, the bar is lower but still significant. It needs to offer enough of a boost to outweigh integration effort, licensing fees, and the risk of disrupting finely tuned processes.

A 10-15% improvement in performance or power efficiency is often the minimum to get serious attention. Why? That's the point where it starts rivaling the gains from tweaking existing processes (like optimizing doping or gate materials) without the headache of a full redesign. For example, when strained silicon debuted in the early 2000s, it delivered ~10-25% performance uplift and became ubiquitous because it slotted into CMOS workflows with minimal disruption. High-k metal gates later offered similar power and leakage improvements-around 20-30%-and saw broad uptake for the same reason. MST claims up to a full node's worth of gain (15-30%), which sounds impressive, but the real-world impact varies by use case and process.

Context is everything. For mature nodes (28nm and above), where scaling's stalled, a 10-20% boost could be a lifeline-think IoT or analog chips where cost trumps bleeding-edge density. Foundries like GlobalFoundries, stuck at 12nm, might bite if MST delivers 15% without new tools. But for leading-edge nodes (5nm, 3nm), where TSMC and Intel are already squeezing out every ounce of efficiency with gate-all-around or backside power delivery, MST's gains need to stack competitively-closer to 20-25%-or offer unique perks (e.g., variability reduction) to justify a shift. Niche markets like power electronics (GaN) might adopt at even lower thresholds-say 10%-if MST cuts costs or simplifies scaling.

Adoption also hinges on trade-offs. A 15% performance bump might not cut it if yields drop 5% or if validation takes a year-fabs live and die by reliability and time-to-market. Conversely, if MST delivers 10% but slashes power enough to win a big 5G contract, that's a green light. Data from Atomera's trials (e.g., with TSI Semiconductors) suggests 10-20% gains in test structures, but full-chip results under production stress are less public. If those hold up at scale, it's in the sweet spot.

So, the magic number? For broad adoption, 15-20% improvement in performance or power-sustained in mass production-is a safe bet. Less than 10%, and it's a tough sell unless it's dirt cheap and seamless. Above 25%, and it's a no-brainer, inertia be damned. MST's likely in that 10-20% zone, which puts it on the cusp-enough to tempt early adopters, but it'll need flawless execution and a few marquee wins to go mainstream. The industry's a graveyard of "good enough" ideas that didn't scale; MST's fate rests on proving it's not just another one.