RF GaN on Silicon Momentum

By: Scott Bibaud, President and CEO, Atomera

Earlier this month, we announced our new approach to GaN-on-silicon and the news seems to have created a huge amount of momentum here at Atomera with the latest sign being the article published yesterday in Compound Semiconductor: Quashing parasitics in RF GaN-on silicon HEMTs. Here are some other accomplishments:

• Last week, we shipped MST wafers for GaN growth to another high potential customer.
• Our white paper on the subject has been widely downloaded by a cross section of industry players.
• In the last few days, we have received new test data from our partners showing very impressive crosstalk results from MST GaN-on-Si for RF applications, a spec of critical interest to designers for optimized signal integrity. Stay tuned for us to share more on this new data in the near future.
• Timing the release before the very important industry IMS conference was key, as it allowed us to stimulate interest from more than a dozen potential customers and partners. As we held meetings with these industry experts, the improvement in parasitic channel to enable near lossless RF performance along with the outstanding linearity even at high powers was seen as a breakthrough solution for MST GaN-on-Si wafers. Commercializing wafers with these characteristics has the potential to lower costs, enable manufacturing of larger wafer sizes and allow integration into standard CMOS devices, each of which would drastically improve industry economics.
• The press also reacted favorably to our news with at least 15 articles published, reaching over 17 million monthly viewers. See them in the news section of our website at com. Word is getting out and we're happy to see this awareness building.

This flurry of activity is testimony to the strong industry interest in GaN-on-silicon and the improvements that MST technology can bring. You can be sure that we will be doing everything in our power to take advantage of the momentum.